Year | 2011 |
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Authors | Li, Yiming |
Paper Title | Chun-Yen Yiu, Yen-Hui Lee, Thet-Thet Khaing, Kuo-Fu Lee, Yiming Li, “Dual Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm MOSFET Devices,”Proceedings of 2010 International Electron Devices and Materials Symposium (IEDMS 2010), Chungli,Taiwan, Nov. 18-19. 2010, p. D4-3. |
Date of Publication | 2011-08-01 |