Year | 2011 |
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Authors | Li, Yiming |
Paper Title | Hui-Wen Cheng, Chih-Hong Hwang, and Yiming Li, “Characteristic Sensitivity of Multi-Gate and Multi-Fin MOSFETs to Random Dopant Fluctuation and Implication for Digital Circuits,” Proceedings of The 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi,Japan, Oct. 7-9, 2009, pp. 812-813. |
Date of Publication | 2011-08-01 |