Year 2011
Authors Li, Yiming
Paper Title Kuo-Fu Lee, Tien-Yeh Li, Zhong-Cheng Su, Chih-Hong Hwang, and Yiming Li, “Device and Circuit Level Suppression Techniques for Random-Dopant-Induced Static Noise Margin Fluctuation in 16-nm-Gate SRAM Cell,” Proceedings of The 2009 International Electron Devices and Materials Symposia (IEDMS 2009), Chang Gung University, Kweishan, Taiwan, Nov. 19-20, 2009, pp. 743-744.
Date of Publication 2011-08-01