Year | 2011 |
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Authors | Li, Yiming |
Paper Title | Kuo-Fu Lee, Yiming Li, Chun-Yen Yiu, and Thet-Thet Khaing, “Effective Suppression of Random-Dopant-Induced Characteristic Fluctuation Using Dual Material Gate Technique for 16 nm MOSFET Devices,” Proceedings of 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, Sep. 22-24, 2010, pp. 697-698. |
Date of Publication | 2011-08-01 |