Year | 2011 |
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Authors | Li, Yiming |
Paper Title | Thet Thet Khaing, Hui-Wen Cheng, Kuo-Fu Lee, Yiming Li, “Random-dopant-induced DC characteristic fluctuations in 16-nm-Gate LAC and inLAC MOSFET devices,” Proceedings of 2010 IEEE International Conference on Semiconductor Electronics (IEEE ICSE 2010), Melaka, Malaysia, Jun. 28-30, 2010, pp.237-240. |
Date of Publication | 2011-08-01 |