Year	2011
Authors	Li, Yiming
Paper Title	Tien-Yeh Li, Chih-Hong Hwang and Yiming Li, “Process-variation- and random-dopant-induced static noise margin fluctuation in nanoscale CMOS and FinFET SRAM cells,” Proceedings of International Asia Symposium on Quality Electronic Design (IEEE ASQED 2009) Kuala Lumpur, Malaysia, July 15-16, 2009, pp. 24-27.
Date of Publication	2011-08-01