Year	2011
Authors	Li, Yiming
Paper Title	Tien-Yeh Li, Chih-Hong Hwang, and Yiming Li, “Random-Dopant-Induced Static Noise Margin Fluctuation and Suppression in 16-nm-Gate CMOS SRAM Cell,” Proceedings of The 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, Oct. 7-9, 2009, pp.1056-1057.
Date of Publication	2011-08-01