Year | 2011 |
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Authors | Li, Yiming |
Paper Title | Yiming Li, Chih-Hong Hwang, and Shao-Ming Yu, “Numerical Simulation of Static Noise Margin for A Six-Transistor Static Random Access Memory Cell with 32nm Fin-typed Field Effect Transistors,” Presented in International Conference on Computational Science 2007 (ICCS 2007), Graduate University of the Chinese Academy of Sciences, Beijing, China, May 27-30, 2007; Published in Lecture Notes in Computer Science, Vol. LNCS 4490, June 2007, pp. 227-234. |
Date of Publication | 2011-08-01 |