Year | 2009 |
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Authors | Li, Yiming |
Paper Title | Todd G. MCKenzie and Yiming Li, "A Drain-Current Model for DG PMOSFETs with Fabricated 35nm Device Comparison" , International Journal of Computational Science and Engineering, Vol. 2, No. 3-4, Nov. 2006, pp. 144-147 (EI期刊), 2006年11月 |
Date of Publication | 2009-03-31 |